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Article Dans Une Revue Nano Letters Année : 2017

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

Résumé

We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam-induced current measurements. The devices display enhanced response in the ultraviolet A (≈ 330-360 nm) / B (≈ 280-330 nm) spectral windows under positive/negative bias. The result is explained by correlation of the photocurrent measurements with scanning transmission electron microscopy observations of the same single nanowire, and semi-classical simulations of the strain and band structure in one and three dimensions.
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Dates et versions

hal-01638719 , version 1 (06-01-2023)

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Maria Spies, Martien I. den Hertog, Pascal Hille, Jörg Schörmann, Jakub Polaczyński, et al.. Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors. Nano Letters, 2017, 17 (7), pp.4231 - 4239. ⟨10.1021/acs.nanolett.7b01118⟩. ⟨hal-01638719⟩
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