Communication Dans Un Congrès Année : 2023

Quantum Modeling of Semiconductors Leakage Currents Induced by Defects

Résumé

We present a full quantum calculation of the electron-hole generation/recombination rate caused by atomic-scale defects, which are known to be at the origin of the noise in semiconductors. While numerous attempts have been made to model this non-radiative multiphonon processes (MPE) using analytical approximations, only a few have reported numerical solutions that consider both the electronic and ionic overlaps. In this study, we tackle this issue within the framework of a complete ab initio calculation, which involves computing the dynamical matrix in large supercells. To address the challenge of calculation the ionic integral, we propose a semi-classical method.
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Dates et versions

hal-04863172 , version 1 (10-01-2025)

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Antoine Jay, C. Mesnard, I. Nicholson, R. Helleboid, G. Mugny, et al.. Quantum Modeling of Semiconductors Leakage Currents Induced by Defects. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023), Sep 2023, Kobe, Japan. pp.141-144, ⟨10.23919/SISPAD57422.2023.10319491⟩. ⟨hal-04863172⟩
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